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Terahertz Radiators Based on Si~3C-SiC MQW IMPATT Diodes

[ Vol. 10 , Issue. 4 ]


Monisha Ghosh, Arindam Biswas and Aritra Acharyya*   Pages 501 - 506 ( 6 )


Aims: The potentiality of Multiple Quantum Well (MQW) Impacts Avalanche Transit Time (IMPATT) diodes based on Si~3C-SiC heterostructures as possible terahertz radiators have been explored in this paper.

Objective: The static, high frequency and noise performance of MQW devices operating at 94, 140, and 220 GHz atmospheric window frequencies, as well as 0.30 and 0.50 THz frequency bands, have been studied in this paper.

Methods: The simulation methods based on a Self-Consistent Quantum Drift-Diffusion (SCQDD) model developed by the authors have been used for the above-mentioned studies.

Results: Thus the noise performance of MQW DDRs will be obviously better as compared to the flat Si DDRs operating at different mm-wave and THz frequencies.

Conclusion: Simulation results show that Si~3C-SiC MQW IMPATT sources are capable of providing considerably higher RF power output with the significantly lower noise level at both millimeter-wave (mm-wave) and terahertz (THz) frequency bands as compared to conventional flat Si IMPATT sources.


Avalanche noise, high frequency, multiple quantum well, self-consistent quantum drift-diffusion model, terahertz.


Department of Electronics and Communication Engineering, Supreme Knowledge Foundation Group of Institutions, 1, Khan Road, Mankundu, Dist.: Hooghly, West Bengal 712139, Department of Mining Engineering, Kazi Nazrul University, Asansol, Burdwan, West Bengal 713340, Department of Electronics and Communication Engineering, Cooch Behar Government Engineering College, Village: Harinchawra, P.O. Ghughumari, Dist.: Cooch Behar, West Bengal 736170

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