C.S. Dash, A. Sivasubramanian and S.R.S. Prabaharan* Pages 622 - 630 ( 9 )
Introduction: We report here our success in developing a flexible RRAM stack structure by employing a low-cost method. Bare conductive commercial electric paint is used as anode against Stainless Steel (SS) foil deposited with Mn3O4 thin films forming a BCEP/Mn3O4/SS thin film stack to understand the intrinsic non-volatile resistive switching behavior of Mn3O4.
Experimental: Thin film Mn3O4 is deposited on a SS (304) foil by means of potential sweep voltammetry by maintaining typical conditions. Interestingly, the pristine device is subjected to an electroforming process which exhibited a digital type bipolar resistive switching characteristics. The study of the conduction mechanism revealed that the resistive switching arises due to local effect occurring in the bulk of Mn3O4, which corresponds to the growth and annihilation of oxygen vacancy nanofilaments, and this is responsible for the change in resistance state of the RRAM between Low Resistance State (LRS) and High Resistance State (HRS) respectively.
Results: In order to affirm the reliability and reproducibility of RRAM structure, the memory retention is monitored over 103 s and subsequently, the endurance test is also carried out ensuring the reproducibility over 100 cycles.
Conclusion: Owing to the flexible nature of BCEP/Mn3O4/SS Foil RRAM stack structure, it is perceived to be a prime candidate for future non-volatile memory and flexible electronics applications.
Resistive switching, transition metal oxides (TMO), filamentary conduction, electrodeposition, flexible electronics, Low Resistance State (LRS), High Resistance State (HRS).
School of Electronics Engineering, Vellore Institute of Technology, Chennai, School of Electronics Engineering, Vellore Institute of Technology, Chennai, SRM Research Institute, Directorate of Research, SRM Institute of Science and Technology, Chennai-603203, Tamil Nadu