Submit Manuscript  

Article Details


Memristor and its Applications: A Comprehensive Review

[ Vol. 10 , Issue. 5 ]

Author(s):

T.A. Anusudha, S.S. Reka* and S.R.S. Prabaharan   Pages 558 - 576 ( 19 )

Abstract:


The emergence of memristor offers new avenues to look at several potential applications ranging from non-volatile memories to neuromorphic system. A typical sign of the physical memristor device is Pinched Hysteresis Loop. In the aspect of accomplishing this loop with high accuracy, several memristor models have been evolved in the past. Moreover, various mathematical window functions have been developed from the researchers to throw more insight into the memristor model with the accordance of enhancing the degree of nonlinearity, resolving boundary effect and boundary lock. This review portrays a brief description of explored memristor models and window functions. With this, a comprehensive analysis is made to depict the advantages and disadvantages in a more explicit manner. Furthermore, this work exhibits the prevailing properties of memristor and the different types of switching mechanisms. Here, the future perspective of the memristive technology is also explored very well as the memristor has become an innovative candidate in the memory technology over the semiconductor. Memristor-based potential applications such as a fine resolution programmable gain amplifier, synapse, and logic gate are also explained briefly.

Keywords:

Memristor, pinched hysteresis loop, dynamic negative differential resistance, boundary lock, window functions, EEPROM.

Affiliation:

School of Electronics Engineering, Vellore Institute of Technology (VIT), Vandalur-Kelambakkam Road, Chennai, 600127, Tamil Nadu, School of Electronics Engineering, Vellore Institute of Technology (VIT), Vandalur-Kelambakkam Road, Chennai, 600127, Tamil Nadu, SRM Research Institute, Directorate of Research, SRM Institute of Science and Technology, Potheri, Mahatma Gandhi Road, SRM Nagar, Kattankulathur, Chennai 603203, Tamil Nadu

Graphical Abstract:



Read Full-Text article