Soumya S. Mohanty, Urmila Bhanja and Guru P. Mishra* Pages 157 - 165 ( 9 )
Background: This work describes the implementation of In0.53Ga0.47As/InP Surrounding Metal Gate Oxide Semiconductor Heterostructure Field Effect Transistor (SG MOSHFET) with gate underlap on both source and drain end to improve the DC and RF performance.
Methods: A comprehensive and methodological investigation of DC and RF performance of III-V semiconductor are made for different underlap length varying from 5nm to 30nm on both sides of the device, which is used to mitigate the short channel issues to improve the device performance. Hydrodynamic model has been taken into consideration for the device simulation and it also includes Auger recombination and the Shockley–Read–Hall (SRH) model. Simulation is performed to analyze the various analog performance of device like drain current, surface potential, transconductance, threshold voltage, drain induced barrier lowering, off current, subthreshold slope, Ion/Ioff ratio, output conductance, intrinsic delay, energy-delay product, transconductance generation factor and radio frequency performance of device, like trans-frequency product and cut-off frequency.
Results: From the simulation, it can be observed that an improved analog and RF performance is obtained at the optimum underlap length.
Conclusion: This work delivers an idea for extended researchers to investigate different aspects of group III–V underlap MOSFETs.
Surrounding gate, MOS-HFET, trans-frequency product, sub threshold slope, intrinsic delay, cut-off frequency, energy delay product.
Device Simulation Lab, Department of Electronics & Communication Engineering, Institute of Technical Education & Research, Siksha 'O' Anusandhan (Deemed to be University), Khandagiri, Bhubaneswar, Department of Electronics & Telecommunications Engineering, IGIT, Saranga, Dhenkanal, Department of Electronics & Telecommunication Engineering, National Institute of Technology, Raipur