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Multiple Quantum Barrier Nano-avalanche Photodiodes - Part III: Time and Frequency Responses

[ Vol. 9 , Issue. 2 ]

Author(s):

Somrita Ghosh and Aritra Acharyya*   Pages 192 - 197 ( 6 )

Abstract:


Background: The time and frequency responses of Multiple Quantum Barrier (MQB) nano-scale Avalanche Photodiodes (APDs) based on Si~3C-SiC material system have been investigated in this final part.

Methods: A very narrow rectangular pulse of pulse-width of 0.4 ps has been used as the input optical pulse having 850 nm wavelength incidents on the p+-side of the MQB APD structures and corresponding current responses have been calculated by using a simulation method developed by the authors.

Results: Finally the frequency responses of the devices are obtained via the Fourier transform of the corresponding pulse current responses in time domain.

Conclusion: Simulation results show that MQB nano-APDs possess significantly faster time response and wider frequency response as compared to the flat Si nano-APDs under similar operating conditions.

Keywords:

Avalanche photodiode, dark current, multiple quantum barrier, photocurrent, quantum well, self-consistent solution, spectral response.

Affiliation:

Department of Electronics and Communication Engineering, Supreme Knowledge Foundation Group of Institutions, 1, Khan Road, Mankundu, Hooghly, West Bengal-712139, Department of Electronics and Communication Engineering, Cooch Behar Government Engineering College, Harinchawra, Ghughumari, Cooch Behar, West Bengal- 736170

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