Somrita Ghosh and Aritra Acharyya* Pages 192 - 197 ( 6 )
Background: The time and frequency responses of Multiple Quantum Barrier (MQB) nano-scale Avalanche Photodiodes (APDs) based on Si~3C-SiC material system have been investigated in this final part.
Methods: A very narrow rectangular pulse of pulse-width of 0.4 ps has been used as the input optical pulse having 850 nm wavelength incidents on the p+-side of the MQB APD structures and corresponding current responses have been calculated by using a simulation method developed by the authors.
Results: Finally the frequency responses of the devices are obtained via the Fourier transform of the corresponding pulse current responses in time domain.
Conclusion: Simulation results show that MQB nano-APDs possess significantly faster time response and wider frequency response as compared to the flat Si nano-APDs under similar operating conditions.
Avalanche photodiode, dark current, multiple quantum barrier, photocurrent, quantum well, self-consistent solution, spectral response.
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