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An Analytical Drain Current Model for Dual-material Gate Graded - channel and Dual-oxide Thickness Cylindrical Gate (DMG-GC-DOT) MOSFET

[ Vol. 9 , Issue. 2 ]

Author(s):

Hind Jaafar*, Abdellah Aouaj, Ahmed Bouziane and Benjamin Iñiguez   Pages 291 - 297 ( 7 )

Abstract:


Background: A novel Dual Material Gate Graded Channel and Dual Oxide Thickness Cylindrical Gate (DMG-GC-DOT) MOSFET is presented in this paper.

Methods: Analytical model of drain current is developed using a quasi-two-dimensional cylindrical form of the Poisson equation and is expressed as a function of the surface potential, which is calculated using the expressions of the current density.

Results: Comparison of the analytical results with 3D numerical simulations using Silvaco Atlas - TCAD software presents a good agreement from subthreshold to strong inversion regime and for different bias voltages.

Conclusion: Two oxide thicknesses with different permittivity can effectively improve the subthreshold current of DMG-GC-DOT MOSFET.

Keywords:

Dual metal gate, Dual Oxide Thickness (DOT), graded channel, subthreshold current, MOSFET, Metal-Oxide- Semiconductor (MOS).

Affiliation:

Faculty of Science and Technology, Laboratory of Automatic, Conversion of Energy and Microelectronics, University Sultan Moulay Slimane, Beni Mellal, Faculty of Science and Technology, Laboratory of Automatic, Conversion of Energy and Microelectronics, University Sultan Moulay Slimane, Beni Mellal, Faculty of Science and Technology, Laboratory of Automatic, Conversion of Energy and Microelectronics, University Sultan Moulay Slimane, Beni Mellal, Department of Electronic, Electrical and Automatic Control Engineering, Universitat Rovira i Virgili, Av Paisos Catalans 26, Tarragona, 43007

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